Light emitting device grown on wavelength converting substrate
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United States of America Patent
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Apr 10, 2012
Grant Date -
Nov 10, 2011
app pub date -
May 6, 2010
filing date -
May 6, 2010
priority date (Note) -
Expired
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Abstract
In some embodiments of the invention, a device includes a substrate and a semiconductor structure. The substrate includes a wavelength converting element comprising a wavelength converting material disposed in a transparent material, a seed layer comprising a material on which III-nitride material will nucleate, and a bonding layer disposed between the wavelength converting element and the seed layer. The semiconductor structure includes a III-nitride light emitting layer disposed between an n-type region and a p-type region, and is grown on the seed layer.
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