Semiconductor bond pad patterns and method of formation
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United States of America Patent
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Apr 10, 2012
Grant Date -
Nov 4, 2010
app pub date -
Apr 26, 2010
filing date -
May 1, 2009
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Abstract
In a semiconductor wafer, the polyimide film underneath a power metal structure is partially etched to create corresponding surface depressions of the conformal top power metal. The depressions at the surface of power metal are visible under optical microscopy. Arrangement of the depressions in a pattern facilitates the alignment of probe needles, set-up of automated wire bonding and microscopic inspection for precise alignment of wire bonds.
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