Crucible for the crystallization of silicon
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United States of America Patent
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Apr 10, 2012
Grant Date -
Aug 21, 2008
app pub date -
Jun 30, 2006
filing date -
Jul 1, 2005
priority date (Note) -
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Abstract
A crucible and method for the crystallization of silicon utilize release coatings. The crucible is used in the handling of molten materials that are solidified in the crucible and then removed as ingots. The crucible does not require the preparation of a very thick coating at the end user facilities, is faster and cheaper to produce, presents an improved release effect and allows the production of silicon ingot without cracks. The crucible includes a base body, a substrate layer containing silicon nitride, an intermediate layer containing silica, and a surface layer containing silicon nitride, silicon dioxide and silicon.
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