Passivation of aluminum nitride substrates
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United States of America Patent
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Apr 3, 2012
Grant Date -
Jun 16, 2011
app pub date -
Feb 16, 2011
filing date -
Jul 30, 2008
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Abstract
The present invention provides methods of protecting a surface of an aluminum nitride substrate. The substrate with the protected surface can be stored for a period of time and easily activated to be in a condition ready for thin film growth or other processing. In certain embodiments, the method of protecting the substrate surface comprises forming a passivating layer on at least a portion of the substrate surface by performing a wet etch, which can comprise the use of one or more organic compounds and one or more acids. The invention also provides aluminum nitride substrates having passivated surfaces.
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