Techniques of forming Ohmic contacts on GaN light emitting diodes
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United States of America Patent
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Apr 3, 2012
Grant Date -
Jan 12, 2012
app pub date -
Jul 15, 2011
filing date -
Jul 15, 2011
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Abstract
A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in a gallium nitride substrate and a layer of p-type gallium nitride is deposited over the quantum well. The surface of the p-type gallium nitride is exposed to an acid-containing solution and then a buffered oxide etch process is performed to provide an etched surface. A metal stack including a layer of silver disposed between layers of platinum is then deposited.
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