Silicon monoxide vapor deposition material and process for producing the same

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United States of America Patent

PATENT NO 8142751
APP PUB NO 20090117023A1
SERIAL NO

11916452

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Abstract

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In a powder-sintered type silicon monoxide based evaporating material which is used to form an evaporated film of silicon monoxide, the generation of splash is restrained. Material strength that can resist against the use of the material is ensured. In order to realize these, a starting powder made of precipitating SiO is sintered at 700 to 1000° C. to form an evaporating material. The precipitation of Si is restrained in the step of the sintering. In the measurement thereof by XRD, the peak strength P1 at a Si peak point generated near 2θ=28° and the base strength P2 at the peak point expected from the average strength gradient before and after the peak point satisfies the following: P1/P2≦3. The compression fracture strength of the evaporating material after the material is sintered is raised to 5 MPa or more by selective use of precipitating SiO produced by a vacuum condensing machine.

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Patent Owner(s)

Patent OwnerAddress
OSAKA TITANIUM TECHNOLOGIES CO LTD1 HIGASHIHAMA-CHO AMAGASAKI-SHI HYOGO 6608533 ?6608533

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Natsume, Yoshitake Amagasaki, JP 7 72

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