Semiconductor device and method of forming low voltage MOSFET for portable electronic devices and data processing centers
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United States of America Patent
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Mar 20, 2012
Grant Date -
Feb 23, 2012
app pub date -
Aug 20, 2010
filing date -
Aug 20, 2010
priority date (Note) -
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Abstract
A semiconductor device has a well region formed within a substrate. A gate structure is formed over a surface of the substrate. A source region is formed within the substrate adjacent to the gate structure. A drain region is formed within the substrate adjacent to the gate structure. A first clamping region and second clamping region below the source region and drain region. A trench is formed through the source region. The trench allows the width of the source region to be reduced to 0.94 to 1.19 micrometers. A plug is formed through the trench. A source tie is formed through the trench over the plug. An interconnect structure is formed over the source region, drain region, and gate structure. The semiconductor device can be used in a power supply to provide a low voltage to electronic equipment such as a portable electronic device and data processing center.
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