Transistor and semiconductor device
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United States of America Patent
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Mar 20, 2012
Grant Date -
Dec 17, 2009
app pub date -
Jul 12, 2007
filing date -
Jul 13, 2006
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Abstract
An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm−3 to achieve a large gate voltage swing.
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