Method of forming source and drain of field-effect-transistor and structure thereof
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United States of America Patent
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Mar 20, 2012
Grant Date -
Jul 10, 2008
app pub date -
Jun 15, 2007
filing date -
Jan 9, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Embodiments of the invention provide a method of forming a field-effect-transistor (FET). The method includes implanting one or more n-type dopants to create one or more implanted regions with at least a portion of the implanted regions being designated as regions for forming source and drain extensions of the FET; activating the implanted regions; etching with a chlorine based etchant to create openings in the implanted regions, and forming the source and drain extensions by exptaxially growing embedded silicon germanium in the openings. Structure of a semiconductor field-effect-transistor made thereof is also provided.
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