Method of measuring numerical aperture of exposure machine, control wafer, photomask, and method of monitoring numerical aperture of exposure machine
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United States of America Patent
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Mar 13, 2012
Grant Date -
Jun 17, 2010
app pub date -
Dec 17, 2008
filing date -
Nov 5, 2008
priority date (Note) -
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Abstract
A method of measuring a numerical aperture of an exposure machine is described. A control wafer having vernier marks thereon and an aberration mask having pinholes therein are provided, wherein each pinhole corresponds to a vernier mark in position. A lithography process using the exposure machine and the aberration mask is performed to the control wafer, so as to form over each vernier mark a photoresist pattern having the same shape of the illumination pattern of the light source of the exposure machine. The numerical aperture of the exposure machine is then derived from a graduation of the vernier mark corresponding to an outer edge of the photoresist pattern.
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