Methods for fabricating polycrystalline SiC electrical devices
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United States of America Patent
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Mar 13, 2012
Grant Date -
Jun 23, 2011
app pub date -
Aug 4, 2010
filing date -
Nov 7, 2005
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Abstract
The present invention relates to a novel electrical devices fabricated from polycrystalline silicon carbide (SiC) and methods for forming the same. The present invention provides a method for fabricating polycrystalline silicon carbide (SiC) products infiltrated with SiC-containing preceramic precursor resins to substantially mask the deleterious effects of trace contaminants, typically nitrogen and aluminum, while reducing operative porosity and enhancing manufacturing ease.
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