Epitaxially coated silicon wafer with 110 orientation and method for producing it
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United States of America Patent
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Mar 13, 2012
Grant Date -
Dec 10, 2009
app pub date -
May 26, 2009
filing date -
Jun 4, 2008
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Expired
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Abstract
An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the <110> direction of the single silicon crystal is tilted away by the angle θ from the normal to the wafer surface and the projection of the tilted <110> direction forms an angle φ with the direction <−110> in the wafer, and θ is given by 0≦θ≦3° and 45°≦φ≦90°, as well as for all symmetrically equivalent directions.
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