Method of reducing bit error rate for a flash memory

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United States of America Patent

PATENT NO 8130544
APP PUB NO 20110038205A1
SERIAL NO

12542609

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Abstract

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A method of reducing coupling effect in a flash memory is disclosed. A neighboring page is read, and a flag is set active if the neighboring page is an interfering page. Data are read from the neighboring page at least two more times using at least two distinct read voltages respectively. The threshold-voltage distributions associated with an original page and the neighboring page are transferred according to the read data and the flag.

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Patent Owner(s)

Patent OwnerAddress
JIANGSU HUACUN ELECTRONIC TECHNOLOGY CO LTD226300 4TH FLOOR OF JIANGHAI ZHIHUI PARK NANTONG HIGH-TECH ZONE NANTONG CITY JIANGSU PROVINCE NANTONG CITY JIANGSU PROVINCE 226300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Shih-Keng Hsinchu, TW 12 198
Chou, Ming-Hung Hsinchu, TW 51 573
Huang, Chien-Fu Hsinchu, TW 96 623
Huang, Han-Lung Hsinchu, TW 16 262

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