Phase change memory cell with MOSFET driven bipolar access device
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United States of America Patent
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Mar 6, 2012
Grant Date -
Mar 11, 2010
app pub date -
Sep 9, 2008
filing date -
Sep 9, 2008
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Expired
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Abstract
Embodiments are directed to memory devices comprising a bipolar junction transistor having an emitter, a base and a collector; a first side of a resistance changing memory element coupled to the emitter of the bipolar junction transistor; and a MOSFET coupled to the base of the bipolar junction transistor.
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