Semiconductor integrated circuit device
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United States of America Patent
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Mar 6, 2012
Grant Date -
Oct 8, 2009
app pub date -
Jun 18, 2009
filing date -
May 22, 2003
priority date (Note) -
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Abstract
With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
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