Isolation structure and formation method thereof

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United States of America Patent

PATENT NO 8120140
APP PUB NO 20100295147A1
SERIAL NO

12470587

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Abstract

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An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDNO 16 LI-HSIN ROAD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yu-Chung Taipei, TW 19 90
Cheng, Chun-Min Kaohsiung, TW 20 53
Hong, Shih-Ping Taichung, TW 31 312
Hsu, Han-Hui Tainan, TW 8 10
Wu, Ming-Tsung Hualien County, TW 14 80

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