Ferroelectric memory device and method for manufacturing the same
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United States of America Patent
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Feb 21, 2012
Grant Date -
May 8, 2008
app pub date -
Sep 7, 2006
filing date -
Sep 12, 2005
priority date (Note) -
Expired
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Abstract
made of an organic material such as PVDF, etc. shows polarization characteristics at low voltage below 1V, and such polarization characteristics continue over a specific time period, not changed as time goes by.Accordingly, it is possible to manufacture a ferroelectric memory device that operates at low voltage and is manufactured with a simplified structure in a simplified method.
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