III-nitride semiconductor light emitting device
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United States of America Patent
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Feb 21, 2012
Grant Date -
Apr 22, 2010
app pub date -
Dec 29, 2009
filing date -
Sep 25, 2008
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate with a first groove and a second groove formed therein, the substrate including a first surface and a second surface opposite to the first surface, a plurality of III-nitride semiconductor layers including a first semiconductor layer formed over the first surface of the substrate, a second semiconductor layer formed over the first III-nitride semiconductor layer, and an active layer disposed between the first and second III-nitride semiconductor layers and generating light by recombination of electrons and holes, a first opening formed on the first groove, a second opening formed on the second groove, a first electrode electrically connected from the second surface to the first III-nitride semiconductor layer through the first groove, and a second electrode electrically connected from the second surface to the second III-nitride semiconductor layer through the second groove and the second opening.
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