Semiconductor light-emitting device and method of manufacturing the same
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United States of America Patent
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Feb 21, 2012
Grant Date -
May 22, 2008
app pub date -
Nov 15, 2007
filing date -
Nov 17, 2006
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Abstract
A semiconductor light-emitting device has an n-type DBR layer (3), an n-type cladding layer (4), an active layer (5), a p-type cladding layer (6), a p-type intermediate layer (7), a p-type contact layer (8), a p-type transparent substrate (9), ohmic electrodes (10 and 11), and a reflecting layer (12). The n-type DBR layer (3) has reflectivity for the emission wavelength of the active layer (5).
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