Semiconductor substrate fabrication by etching of a peeling layer
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United States of America Patent
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Feb 21, 2012
Grant Date -
Dec 4, 2008
app pub date -
Aug 24, 2006
filing date -
Aug 25, 2005
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Abstract
A semiconductor substrate fabrication method according to the first aspect of this invention is characterized by including a preparation step of preparing an underlying substrate, a stacking step of stacking, on the underlying substrate, at least two multilayered films each including a peeling layer and a semiconductor layer, and a separation step of separating the semiconductor layer.
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