Piezoelectric single crystal and method of production of same, piezoelectric element, and dielectric element
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United States of America Patent
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Feb 21, 2012
Grant Date -
Nov 27, 2008
app pub date -
Nov 6, 2006
filing date -
Nov 4, 2005
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Abstract
A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K.sub.3.sup.T, high piezoelectric constants (d.sub.33 and k.sub.33), high phase transition temperatures (Tc and T.sub.RT), high coercive electric field Ec and improved mechanical properties and thus can be used in high temperature ranges and high voltage conditions. Furthermore, the piezoelectric single crystals are produced by the solid-state single crystal growth adequate for mass production of single crystals and the single crystal composition is developed not to contain expensive raw materials so that the piezoelectric single crystals can be easily commercialized. With the piezoelectric single crystals and piezoelectric single crystal application parts, the piezoelectric and dielectric application parts using the piezoelectric single crystals of excellent properties can be produced and used in the wide temperature range.
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