Non-polar III-V nitride material and production method
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United States of America Patent
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Feb 21, 2012
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Mar 26, 2009
app pub date -
Sep 26, 2007
filing date -
Sep 26, 2007
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Abstract
A method for growing flat, low defect density, and strain-free thick non-polar III-V nitride materials and devices on any suitable foreign substrates using a fabricated nano-pores and nano-network compliant layer with an HVPE, MOCVD, and integrated HVPE/MOCVD growth process in a manner that minimum growth will occur in the nano-pores is provided. The method produces nano-networks made of the non-polar III-V nitride material and the substrate used to grow it where the network is continuous along the surface of the template, and where the nano-pores can be of any shape.
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