Plasma enhanced chemical vapor deposition technology for large-size processing
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United States of America Patent
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Feb 14, 2012
Grant Date -
Jan 22, 2009
app pub date -
Aug 4, 2007
filing date -
Jul 19, 2007
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Abstract
Methods for forming a film stack suitable for transistor fabrication using a low temperature plasma enhanced chemical vapor deposition (PECVD) process are provided. In one embodiment, the method includes providing a substrate in a PECVD chamber, depositing a dual layer SiNx film on the substrate, depositing a dual layer amorphous silicon film on the SiNx film, and depositing a n-doped silicon film on the dual layer amorphous silicon film. The aforementioned films are deposited at a temperature less than about 300 degrees Celsius in the same PECVD chamber.
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