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United States of America Patent

PATENT NO 8111535
APP PUB NO 20090201712A1
SERIAL NO

12369875

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A programmable volatile memory cell has a reset device in communication with a bit store. The reset device may produce a high or low logic state within a latch loop when activated by an assertive logic level on a reset line. A set of mask programmable vias may be provided on a single mask layer in a semiconductor fabrication process for the memory cell. A program-selectable one of two sets of vias may communicate with one reset device to the reset line and the other reset device to ground. In this way a single and programmatically determinable logic state may be produced in the memory cell with reset signaling. Otherwise, the memory cell is capable of retaining a logic state according to read/write processes. The memory cell may be implemented in an array where all or some of the cells may be reset at once.

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Patent Owner(s)

Patent OwnerAddress
SILICON LABORATORIES INC400 W CESAR CHAVEZ AUSTIN TX 78701

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akyildiz, Ahmet Saratoga, US 5 116
Richmond, Gregory Jon Cupertino, US 7 42

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