System and method of sensing and removing residual charge from a processed wafer

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United States of America Patent

PATENT NO 8111499
APP PUB NO 20100271744A1
SERIAL NO

12505381

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Systems and methods for removing residual charge from a processed wafer are described. Removal of residual charge eliminates de-chucking failure that may break or damage the wafer. Residual charge is removed by applying a reverse polarity discharging DC voltage to an electrode embedded in an electrostatic chuck (ESC) supporting the wafer, and providing an outlet to the residual charge to ground via a lift pin assembly. Lift pin assembly is kept at the same potential with respect to a pedestal of the ESC to avoid sparking during the application of RF power to generate plasma. A residual charge sensor is included to sense and measure the amount of residual charge, so that the parameters of the reverse polarity discharging voltage can be adjusted in a subsequent de-chucking operation.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED MICRO-FABRICATION EQUIPMENT INC CHINA201201 SHANGHAI CITY JINGQIAO EXPORT PROCESSING ZONE OF PUDONG NEW AREA (SOUTH) TAIHUA ROAD NO 188 MUNICIPAL DISTRICT SHANGHAI CITY 201201

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jinyuan Shanghai, CN 17 282
Du, Ruoxin Shanghai, CN 2 5
Ni, Tuqiang Shanghai, CN 77 1517
Ouyang, Liang Shanghai, CN 7 73
Wang, Ye Shanghai, CN 193 1582

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