Substrate for epitaxy and method of preparing the same

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United States of America Patent

PATENT NO 8110848
APP PUB NO 20080311393A1
SERIAL NO

12213212

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Abstract

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or less. Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.

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Patent Owner(s)

Patent OwnerAddress
NICHIA CORPORATION491-100 OKA KAMINAKA-CHO ANAN-SHI TOKUSHIMA 774-8601
AMMONO SP Z O O00-377 WARSAW

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doradzinski, Roman Warsaw, PL 24 951
Dwilinski, Robert Warsaw, PL 23 956
Garczynski, Jerzy Lomianki, PL 28 1305
Kanbara, Yasuo Anan, JP 28 1468
Sierzputowski, Leszek Union, US 16 685

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