Cyclic siloxane compound, a material for forming Si-containing film, and its use
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United States of America Patent
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Aug 20, 2013
Grant Date -
Mar 4, 2010
app pub date -
Jan 17, 2006
filing date -
Jan 17, 2006
priority date (Note) -
Withdrawn
status (Latency Note)
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Abstract
The present invention has the objects to provide a novel material for forming Si-containing film, especially a material containing a cyclic siloxane compound suitable to a PECVD equipment for low dielectric constant insulating film, and to provide an Si-containing film using the same, and a semiconductor device containing those films. The present invention relates to a material for forming Si-containing film, containing a cyclic siloxane compound represented by the following general formula (1)(In the formula, A represents a group containing at least one selected from the group consisting of an oxygen atom, a boron atom and a nitrogen atom, n is 1 or 2, and x is an integer of from 2 to 10.), and its use.
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