Multi layer alignment and overlay target and measurement method
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United States of America Patent
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Jan 31, 2012
Grant Date -
Mar 10, 2011
app pub date -
Nov 9, 2010
filing date -
Sep 13, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields.
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