Thin film transistor with semiconductor precursor and liquid crystal display having the same
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United States of America Patent
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Jan 31, 2012
Grant Date -
Feb 25, 2010
app pub date -
Oct 28, 2009
filing date -
Sep 4, 2006
priority date (Note) -
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Abstract
A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.
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