III-nitride semiconductor light emitting device having a multilayered pad
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United States of America Patent
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Jan 24, 2012
Grant Date -
Jun 3, 2010
app pub date -
Dec 29, 2009
filing date -
Dec 2, 2008
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present disclosure relates to a III-nitride semiconductor light-emitting device including: a plurality of III-nitride semiconductor layers having a first III-nitride semiconductor layer having a first conductivity type, a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; a bonding pad electrically connected to the plurality of III-nitride semiconductor layers; a protection film disposed over the bonding pad; and a buffer pad disposed between the bonding pad and the protection film and formed to expose the bonding pad.
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