Modifiable gate stack memory element
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United States of America Patent
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Jan 17, 2012
Grant Date -
May 1, 2008
app pub date -
Feb 20, 2007
filing date -
Oct 27, 2006
priority date (Note) -
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Abstract
An apparatus and method for storing information are provided, including using an integrated circuit including a transistor having a channel, a gate oxide layer, a gate electrode, and a modifiable gate stack layer. To store information, the on-resistance of the transistor is changed by causing a non-charge-storage based physical change in the modifiable gate stack layer.
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