Method for surface treating semiconductor

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United States of America Patent

PATENT NO 8097541
APP PUB NO 20090117747A1
SERIAL NO

11990440

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Abstract

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is subjected to removal of a native oxide film and then hydrogen bonding. The resultant heat remains in jig and makes it difficult to maintain the wafers to temperature appropriate to removal of a native oxide film., in which a native oxide film has been removed.

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Patent Owner(s)

Patent OwnerAddress
ULVAC INCKANAGAWA JAPAN KANAGAWA
F T L CO LTDKAWASAKI-SHI KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inoue, Hiroaki Shizuoka, JP 220 2885
Miura, Yutaka Shizuoka, JP 33 501
Satou, Masayuki Shizuoka, JP 43 224
Takagi, Mikio Kanagawa, JP 46 1268
Takahashi, Seiichi Shizuoka, JP 60 766

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