Lightly doped silicon carbide wafer and use thereof in high power devices
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United States of America Patent
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Jan 17, 2012
Grant Date -
May 7, 2009
app pub date -
Jan 13, 2009
filing date -
Aug 30, 2002
priority date (Note) -
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Abstract
. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.
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