Silicon carbide Zener diode
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United States of America Patent
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Jan 10, 2012
Grant Date -
Apr 8, 2010
app pub date -
Apr 25, 2008
filing date -
Apr 26, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type.
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