Continuously variable graded artificial dielectrics using nanostructures

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United States of America Patent

PATENT NO 8089152
APP PUB NO 20110165405A1
SERIAL NO

11589988

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Abstract

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Graded artificial dielectrics using nanostructures, such as nanowires, are disclosed. The graded artificial dielectric includes a material (typically a dielectric) with a plurality of nanostructures, such as nanowires, embedded within the dielectric material. One or more characteristics of the nanostructures are spatially varied from a first region within the dielectric to a second region within the dielectric to produce permittivity of the graded artificial dielectric that is spatially varied. The characteristics that can be varied include, but are not limited to, nanostructure density, nanostructure length, nanostructure aspect ratio, nanostructure oxide ratio, and nanostructure alignment. Methods of producing graded artificial dielectrics are also provided. A wide range of electronic devices such as antennas can use graded artificial dielectrics with nanostructures to improve performance.

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Patent Owner(s)

Patent OwnerAddress
NANOSYS INC233 S HILLVIEW DRIVE MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Miller, Jeffrey Los Altos Hills, US 99 1917

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