Fabrication method of trenched metal-oxide-semiconductor device
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United States of America Patent
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Jan 3, 2012
Grant Date -
Sep 22, 2011
app pub date -
May 31, 2011
filing date -
Dec 12, 2008
priority date (Note) -
Expired
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Abstract
A fabrication method of a trenched metal-oxide-semiconductor device is provided. Firstly, an epitaxial layer is formed on a substrate. Then, a plurality of gate trenches is formed in the epitaxial layer. Afterward, a spacer is formed on the sidewall of the trench gates. The spacer is utilized as a mask to selectively implant oxygen ion into the bottom of the gate trenches so as to form a bottom oxide layer on the bottom of the gate trenches to reduce capacitance between gate and drain.
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