Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation

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United States of America Patent

PATENT NO 8083986
APP PUB NO 20090185942A1
SERIAL NO

12315520

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A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).

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Patent OwnerAddress
NATIONAL INSTITUTE OF AEROSPACE ASSOCIATES100 EXPLORATION WAY HAMPTON VA 23666

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Sang Hyouk Poquoson, US 27 184
Chu, Sang-Hyon Newport News, US 8 71
Elliott, James R Vesuvius, US 31 277
Kim, Jae-Woo Newport News, US 79 933
King, Glen C Yorktown, US 29 259
Lillehei, Peter T Yorktown, US 15 93
Park, Yeonjoon Yorktown, US 39 290
Stoakley, Diane M Ashland, US 17 149

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