Tri-state memory device and method
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United States of America Patent
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Dec 20, 2011
Grant Date -
Mar 25, 2010
app pub date -
Sep 25, 2009
filing date -
Sep 25, 2008
priority date (Note) -
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Abstract
A non-volatile tri-state random access memory device, including a permanent magnetic bit; a write module in functional communication with the permanent magnetic bit and configured to selectably alter the permanent magnetic bit between three magnetic states, a write module including a write coil disposed about the permanent magnetic bit and in communication with a source of electrical power; and a read module in functional communication with the permanent magnetic bit and configured to observe and communicate each of three magnetic states of the permanent magnetic bit, the read module including a read sensor coupled to a read return line.
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