Semiconductor device and method of manufacturing the same
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United States of America Patent
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Dec 13, 2011
Grant Date -
Oct 30, 2008
app pub date -
Feb 15, 2008
filing date -
Feb 16, 2007
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor device, includes the steps of forming an insulating film on a semiconductor substrate having a silicide layer, forming a hole in the insulating film on the silicide layer, cleaning an inside of the hole and a surface of the silicide layer, forming a titanium layer on a bottom surface and an inner peripheral surface of the hole by a CVD method, forming a copper diffusion preventing barrier metal layer on the titanium layer in the hole, and burying a copper layer in the hole.
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