Semiconductor device and fabrication method thereof
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United States of America Patent
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Dec 13, 2011
Grant Date -
Feb 17, 2011
app pub date -
Oct 27, 2010
filing date -
Jul 7, 2005
priority date (Note) -
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Abstract
Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.
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