Method and system of finding a read voltage for a flash memory

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United States of America Patent

PATENT NO 8072805
APP PUB NO 20110044101A1
SERIAL NO

12543496

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Abstract

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A method and system of finding a read voltage for a flash memory is disclosed. Data are read from array cells of the flash memory with a default read voltage, and a recorded state bit number that is recorded during programming is also read. Determine an optimal read voltage if the readout data do not pass the error correction control (ECC). Data are then re-read from the array cells of the flash memory with the determined optimal read voltage.

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Patent Owner(s)

Patent OwnerAddress
SKYMEDI CORPORATION5F NO 6 DUSING 1ST RD SCIENCE PARK HSINCHU R O C

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Shih-Keng Hsinchu, TW 12 198
Chou, Ming-Hung Hsinchu, TW 51 573
Huang, Chien-Fu Hsinchu, TW 96 623
Huang, Han-Lung Hsinchu, TW 16 262

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