Method for creating nonequilibrium photodetectors with single carrier species barriers
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United States of America Patent
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Dec 6, 2011
Grant Date -
Sep 16, 2010
app pub date -
May 27, 2010
filing date -
Apr 17, 2008
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Abstract
A method of forming a diode comprises the steps of forming an extraction region of a first conductivity type, forming an active region of a second conductivity type that is opposite the first conductivity type, and forming an exclusion region of the second conductivity type to be adjacent the active region. The active region is formed to be adjacent to the extraction region and along a reverse bias path of the extraction region and the exclusion region does not resupply minority carriers while removing majority carriers. At least one of the steps of forming the exclusion region and forming the extraction region includes the additional step of forming a barrier that substantially reduces the flow of the carriers that flow toward the active region, but does not rely on a diffusion length of the carriers to block the carriers.
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