Phase change memory device and fabrication method thereof
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United States of America Patent
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Dec 6, 2011
Grant Date -
Mar 26, 2009
app pub date -
Dec 4, 2008
filing date -
Jun 26, 2006
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Abstract
A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.
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