Manufacturing method of a silicon carbide semiconductor device
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United States of America Patent
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Dec 6, 2011
Grant Date -
Nov 27, 2008
app pub date -
May 20, 2008
filing date -
May 21, 2007
priority date (Note) -
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Abstract
A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched, whereby a two-layer etching mask is formed in which Ni film portions overhang Al film portions. Mesa grooves are formed by dry etching by using this etching mask.
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