Semiconductor strain gauge and the manufacturing method
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United States of America Patent
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Nov 22, 2011
Grant Date -
Mar 18, 2010
app pub date -
Nov 12, 2009
filing date -
May 1, 2006
priority date (Note) -
Expired
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Abstract
A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.
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