EEPROM and method for manufacturing EEPROM
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United States of America Patent
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Nov 22, 2011
Grant Date -
Apr 8, 2010
app pub date -
Sep 21, 2009
filing date -
Oct 6, 2008
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An electrically erasable programmable read only memory (EEPROM) is disclosed. The EEPROM includes a tunneling region in a semiconductor substrate, a control gate region in the semiconductor substrate and separated from the tunneling region by a device isolating layer, a tunnel oxide layer in a trench in the semiconductor substrate between the tunneling region and the control gate region, and a polysilicon layer on the tunnel oxide layer.
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