Thin film transistor, display device, including the same, and associated methods

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United States of America Patent

PATENT NO 8058645
APP PUB NO 20090250693A1
SERIAL NO

12385197

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Abstract

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A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG DISPLAY CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jeong, Jae-Kyeong Suwon-si, KR 52 8067
Jeong, Jong-Han Suwon-si, KR 43 7381
Mo, Yeon-Gon Suwon-si, KR 80 8241
Yang, Hui-Won Suwon-si, KR 39 2765

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