III-nitride semiconductor light emitting device
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United States of America Patent
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Nov 8, 2011
Grant Date -
Jan 21, 2010
app pub date -
Oct 30, 2006
filing date -
Oct 28, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention discloses a III-nitride compound semiconductor light emitting device including an active layer for generating light by recombination of an electron and a hole between an n-type nitride compound semiconductor layer and a p-type nitride compound semiconductor layer. The active layer is disposed over the n-type nitride compound semiconductor layer. The III-nitride compound semiconductor light emitting device includes a masking film made of MgN and grown on the p-type nitride compound semiconductor layer, and at least one nitride compound semiconductor layer grown after the growth of the masking film made of MgN.
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