Silicon carbide semiconductor device and method for manufacturing the same
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United States of America Patent
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Nov 8, 2011
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app pub date -
Aug 7, 2007
filing date -
Aug 8, 2006
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Abstract
A channel layer (40) for forming a portion of a carrier path between a source electrode (100) and a drain electrode (110) is formed on a drift layer (30). The channel layer (40) includes Ge granular crystals formed on the drift layer (30), and a cap layer covering the Ge granular crystals.
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