Gallium nitride light-emitting device with ultra-high reverse breakdown voltage
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 8, 2011
Grant Date -
Jan 13, 2011
app pub date -
Aug 31, 2007
filing date -
Aug 31, 2007
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer). The n-type layer is epitaxially grown by using ammonia gas (NH.sub.3) as the nitrogen source prior to growing the active layer and the p-type layer. The flow rate ratio between group V and group III elements is gradually reduced from an initial value to a final value. The GaN-based LED exhibits a reverse breakdown voltage equal to or greater than 60 volts.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully